FDLL4151 ,High Conductance Fast DiodeGeneral DescriptionA general purpose diode that couples high forward conductance fast swiching spee ..
FDLL4448 ,Small Signal Diode1N/FDLL 914/A/B / 916/A/B / 4148 / 44481N/FDLL 914/A/B / 916/A/B / 4148 / 4448Small Signal DiodeAbs ..
FDLL457A ,Small Signal DiodeFDLL457AFDLL457ACOLOR BAND MARKING COLOR BAND MARKING DEVICE 1ST BAND 2ST B ..
FDM 6296 ,30V Single N-Channel, Logic-Level, PowerTrench MOSFETApplications Point of Load Converter 1/16 Brick Synchronous RectifierMicroFETBottom Top85 47656 37 2 ..
FDM2452NZ , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDM2452NZ , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDLL4151
High Conductance Fast Diode
FDLL4151 Small Signal Diode FDLL4151 Small Signal Diode General Description A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the location of the cathode terminal which is indicated by the first color band. Cathode Band BLACK YELLOW Expansion Gap Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 75 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0microsecond 4.0 A T Storage Temperature Range -65 to +200 °C STG T Operating Junction Temperature -65 to +200 °C J * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum juction temperature of 200 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 350 °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max Units V Breakdown Voltage I = 5μA75 V R R V Forward Voltage I = 50mA 1 V F F I Reverse Current V = 50V 50 nA R R V = 30V, T = 150°C 50 μA R A C Total Capacitance V = 0, f = 1.0MHz 4 pF T R t Reverse Recovery Time I = I = 10mA, I = 1mA 4ns rr1 F R RR R = 100Ω L t Reverse Recovery Time V = 6V, I = 10mA, I = 1mA 2ns rr2 R F RR R = 100Ω L ©2004 1 FDLL4151 Rev. B
