| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDJ1032C-NL |
FAIRCHILD|Fairchild Semiconductor |
N/a |
170 |
 |
|
FDJ127P ,P-Channel -1.8 Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDJ128N ,N-Channel 2.5Vgs Specified PowerTrench MOSFETFeatures This N-Channel -2.5V specified MOSFET uses • 5.5 A, 20 V. R = 35 mΩ @ V = 4.5 V DS(ON) GSF ..
FDJ129 ,P-Channel -2.5 Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDJ129 ,P-Channel -2.5 Vgs Specified PowerTrench MOSFETFeatures This P-Channel -2.5V specified MOSFET uses • –4.2 A, –20 V. R = 70 mΩ @ V = –4.5 V DS(ON) ..
FDJ129P ,P-Channel -2.5Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KT3 , IGBT-modules
