| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDI22AN06LAO |
FAIRCHIL|Fairchild Semiconductor |
N/a |
1500 |
 |
|
| FDI22AN06LAO |
FAIRCHILD|Fairchild Semiconductor |
N/a |
1800 |
|
|
FDI3632 ,N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhmApplicationsr = 7.5mΩ (Typ.), V = 10V, I = 80A DC/DC converters and Off-Line UPSDS(ON) GS DQ (t ..
FDI3632 ,N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhmFDB3632 / FDP3632 / FDI3632July 2002FDB3632 / FDP3632 / FDI3632®N-Channel UltraFET Trench MOSFET100 ..
FDI3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16mOhmApplications•r = 14mΩ (Typ.), V = 10V, I = 61A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETApplications capability • Battery management/Charger Application • High performance trench technol ..
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KT3 , IGBT-modules
