FDG6335N ,20V N-Channel PowerTrench MOSFETFDG63 135NFDG6335N® ® NV-Channel hThis N-Channel MOSFET has been designed• 7 A, R = m Ω = specific ..
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FDG6335N
20V N-Channel PowerTrench MOSFET
FDG63 1 35N FDG6335N Ò Ò NV-Channel h This N-Channel MOSFET has been designed · 7 A, R = mW = specifically to improve the overall efficiency of DC/DC R = mW = 2.5 converters using either synchronous or conventional switching PWM controllers. It has been optimized use · Low gate charge (1.1 nC typical) in small switching regulators, providing an extremely R and gate charge (Q) in a small package. ON)G · High performance trench technology for extremely DS(ON) · Compact industry standard SC70-6 surface mount · DC/DC converter · Power management · Loadswitch S DG1 or 46 or 3S D G2 or 55 or 2G D G SPin 13 or 64 or 1DS The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. o T=25C unless otherwise notedA RatingsUnits VDrain-Source VoltageV VGate-Source Voltage ± 12V IDrain Current– Continuous7AD – Pulsed PPower Dissipation for Single OperationWD TTOperating and Storage Junction Temperature Range–55 to +150 °CJ Thermal Characteristics RThermal Resistance, Junction-to-Ambient °C/W q Device MarkingReel SizeTape widthQuantity .FDG6335N3000 units Ó2001 Rev C (W)FDG6335N 8mm7’’35 Device Package Marking and Ordering Information JA 415(Note 1) STG , 0.3(Note 1) 2.1 0.(Note 1) GSS 20DSS ParameterSymbol Absolute Maximum Ratings Dual N-Channel SC70-6 package Applications low R DS( low GSDS(ON) V @ V400 GSDS(ON) 4.5 V @ V30020 V.0. FeaturesGeneral Description MOSFETPowerTrenc20 200October
