| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDG6313N/13 |
FAIRCHIL|Fairchild Semiconductor |
N/a |
6000 |
 |
|
FDG6316 ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDG6316P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –0.7 A, –12 V. R = 270 mΩ @ V = –4.5 V DS(ON) ..
FDG6317NZ ,Dual 20V N-Channel PowerTrench MOSFETApplicationslow RDS(ON)• DC/DC converter• Compact industry standard SC70-6 surface mount• Power man ..
FDG6318P ,Dual P-Channel, Digital FETFeatures These dual P-Channel logic level enhancement mode • –0.5 A, –20 V. R = 780 mΩ @ V = –4.5 V ..
FDG6320C ,Dual N & P Channel Digital FETGeneral Description320DG November ..
FP1A3M-T1B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A3M-T2B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A4A ,Hybrid transistorDATA SHEETCOMPOUND TRANSISTORFP1 SERIESon-chip resistor PNP silicon epitaxial transistorFor mid-s ..
