| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDG327NZ-NL |
FAIRCHILD|Fairchild Semiconductor |
N/a |
490 |
 |
|
| FDG327NZ-NL |
FAIRCHIL|Fairchild Semiconductor |
N/a |
3000 |
|
|
FDG328P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is produced in• –1.5 A, –20 V.R = 0.145 Ω @ V = –4.5 V ..
FDG329N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG329N
FDG329N ,20V N-Channel PowerTrench MOSFETFDG329NFDG329N® ®PowerTrenchThis N-Channel MOSFET has been designed• 1.5 A, 20 V.R = 90 m Ω = 4.5 ..
FDG361N ,N-Channel 100V Specified PowerTrench MOSFETGeneral DescriptionThese N-Channel 100V specified MOSFETs are • 0.6 A, 100 V. R = 500 mΩ @ V = 10 V ..
FDG361N ,N-Channel 100V Specified PowerTrench MOSFETApplications• Load switch• Battery protection• Power managementSD1 6D2 5GDPin 13 4DSC70-6oAbsolute ..
FP106 ,TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP107 ,TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP10R12W1T4 , EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
