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FDG326P-F40 FAIRCHILD|Fairchild Semiconductor N/a 63000



FDG327N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG327N
FDG327N ,20V N-Channel PowerTrench MOSFETFDG327NFDG327N® ®PowerTrenchThis N-Channel MOSFET has been designed• 1.5 A, 20 V.R = 90 m Ω = 4.5 ..
FDG327NZ ,20V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 1.5 A, 20 V. R = 90 mΩ @ V = 4.5 V. DS(ON) GSs ..
FDG327NZ ,20V N-Channel PowerTrench MOSFETApplications • Low gate charge • DC/DC converter • High performance trench technology for extre ..
FDG328P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is produced in• –1.5 A, –20 V.R = 0.145 Ω @ V = –4.5 V ..
FP1016 , SILICON SURGE SUPPRESSOR DIODES
FP102 ,PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP103 ,PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode DC/DC Converter ApplicationsOrdering number:ENN3962APNP Epitaxial Planar Silicon TransistorSchottky Barrier DiodeFP103DC/DC Con ..
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