FDG316P ,P-Channel Logic Level PowerTrench MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced using• -1.6 A, -30 V. R = 0.19 Ω @ V = -10 VD ..
FDG318P ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Load switch• Compact industry standard SC70-6 surface mount• Power managem ..
FDG326P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –1.5 A, –20 V. R = 140 mΩ @ V = –4.5 VDS(ON) GSF ..
FDG326P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FDG327N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG327N
FDG327N ,20V N-Channel PowerTrench MOSFETFDG327NFDG327N® ®PowerTrenchThis N-Channel MOSFET has been designed• 1.5 A, 20 V.R = 90 m Ω = 4.5 ..
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
FP0705R2-R12-R , High Current, Low-Profile Power Inductors
FP0705R2-R15-R , High Current, Low-Profile Power Inductors
FP0705R2-R18-R , High Current, Low-Profile Power Inductors
FP1007R1-R22-R , High Current, High Frequency, Power Inductors
FP1007R2-R17-R , High Current, High Frequency, Power Inductors
FDG316P
P-Channel Logic Level PowerTrench MOSFET
FDG316P December 2001 FDG316P P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using • -1.6 A, -30 V. R = 0.19 Ω @ V = -10 V DS(ON) GS Fairchild Semiconductor's advanced PowerTrench R = 0.30 Ω @ V = -4.5 V. process that has been especially tailored to minimize DS(ON) GS on-state resistance and yet maintain superior switching performance. • Low gate charge (3.5nC typical). These devices are well suited for low voltage and • High performance trench technology for extremely low battery powered applications where low in-line power R . loss and fast switching are required. DS(ON) • Compact industry standard SC70-6 surface mount Applications package. • DC/DC converter • Load switch • Power Management S 1 6 D D 5 2 G D 3 3 4 D SC70-6 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage -30 V DSS VGSS Gate-Source Voltage ±20 V I Drain Current - Continuous (Note 1a) -1.6 A D - Pulsed -6 PD (Note 1a) Power Dissipation for Single Operation 0.75 W (Note 1b) 0.48 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg Thermal Characteristics (Note 1b) °C/W R Thermal Resistance, Junction-to-Ambient 260 JA θ Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .36 FDG316P 7’’ 8mm 3000 units 2001 FDG316P Rev. D
