| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDG315N-F40 |
FAIRCHILD|Fairchild Semiconductor |
N/a |
81000 |
 |
|
FDG316P ,P-Channel Logic Level PowerTrench MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced using• -1.6 A, -30 V. R = 0.19 Ω @ V = -10 VD ..
FDG318P ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Load switch• Compact industry standard SC70-6 surface mount• Power managem ..
FDG326P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –1.5 A, –20 V. R = 140 mΩ @ V = –4.5 VDS(ON) GSF ..
FDG326P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FDG327N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG327N
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
FP0705R2-R12-R , High Current, Low-Profile Power Inductors
FP0705R2-R15-R , High Current, Low-Profile Power Inductors
