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FDG1024NZFAIN/a9000avai20V Dual N-Channel PowerTrench?MOSFET


FDG1024NZ ,20V Dual N-Channel PowerTrench?MOSFETapplications as a „ Max r = 389 mΩ at V = 1.5 V, I = 0.8 ADS(on) GS Dreplacement for bipolar digita ..
FDG311N ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 Ω @ V = 4.5 VDS( ..
FDG311N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETApplications R .DS(ON)• Load switch Compact industry standard SC70-6 surface mount Power manag ..
FDG311N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 Ω @ V = 4.5 VDS( ..
FDG312P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel MOSFET is produced using Fairchild• -1.2 A, -20 V. R = 0.18 Ω @ V = -4.5 VDS ..
FDG313N ,Digital FET, N-ChannelFeaturesThis N-Channel enhancement mode field effect• 0.95 A, 25 V. R = 0.45 Ω @ V = 4.5 VDS(on) GS ..
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FDG1024NZ
20V Dual N-Channel PowerTrench?MOSFET
® FDG1024NZ Dual N-Channel Power Trench MOSFET June 2010 FDG1024NZ ® Dual N-Channel PowerTrench MOSFET 20 V, 1.2 A, 175 mΩ Features General Description „ Max r = 175 mΩ at V = 4.5 V, I = 1.2 A This dual N-Channel logic level enhancement mode field effect DS(on) GS D transistors are produced using Fairchild’s proprietary, high cell „ Max r = 215 mΩ at V = 2.5 V, I = 1.0 A DS(on) GS D density, DMOS technology. This very high density process is „ Max r = 270 mΩ at V = 1.8 V, I = 0.9 A especially tailored to minimize on-state resistance. This device DS(on) GS D has been designed especially for low voltage applications as a „ Max r = 389 mΩ at V = 1.5 V, I = 0.8 A DS(on) GS D replacement for bipolar digital transistors and small signal „ HBM ESD protection level >2 kV (Note 3) MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with „ Very low level gate drive requirements allowing operation in different bias resistor values. 1.5 V circuits (V < 1 V) GS(th) „ Very small package outline SC70-6 „ RoHS Compliant S2 G2 S1 D1 1 6 D1 G1 2 5 G2 D2 G1 D2 3 4 S2 S1 SC70-6 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage ±8 V GS -Continuous T = 25°C (Note 1a) 1.2 A I A D -Pulsed 6 Power Dissipation T = 25°C (Note 1a) 0.36 A P W D Power Dissipation T = 25°C (Note 1b) 0.30 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 350 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 415 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .4N FDG1024NZ SC70-6 7 ” 8 mm 3000 units 1 ©2010 FDG1024NZ Rev.C
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