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FDFS2P753Z
-30V Integrated P-Channel PowerTrench?MOSFET and Schottky Diode
® FDFS2P753Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode November 2006 FDFS2P753Z tm ® Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description Max r = 115mΩ at V = -10V, I = -3.0A The FDFS2P753Z combines the exceptional performance of DS(on) GS D Fairchild's PowerTrench MOSFET technology with a very low Max r = 180mΩ at V = -4.5V, I = -1.5A DS(on) GS D forward voltage drop Schottky barrier rectifier in an SO-8 V < 500mV @ 1A package. F V < 580mV @ 2A This device is designed specifically as a single package solution F for DC to DC converters. It features a fast switching, low gate Schottky and MOSFET incorporated into single power surface charge MOSFET with very low on-state resistance. The mount SO-8 package independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Electrically independent Schottky and MOSFET pinout for design flexibility Application RoHS Compliant DC - DC Conversion D D 4 G D 5 C C 6 S D 3 A C 7 2 G SO-8 S 8 1 C A A Pin 1 A MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Note 1a) -3 I A D -Pulsed -16 P Power Dissipation (Note 1a) 1.6 W D E Single Pulse Avalanche Energy (Note 2) 6 mJ AS V Schottky Repetitive Peak Reverse Voltage -20 V RRM I Schottky Average Forward Current (Note 1a) -2 A O T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 78 θJA °C/W R Thermal Resistance, Junction to Case (Note 1) 40 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDFS2P753Z FDFS2P753Z SO-8 330mm 12mm 2500 units 1 ©2006 FDFS2P753Z Rev.A
