FDU8896 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 5.7mΩ , V = 10V, I = 35ADS(ON) ..
FDU8896 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 5.7mΩ , V = 10V, I = 35ADS(ON) ..
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FDD8896-FDD8896_NL-FDU8896
30V N-Channel PowerTrenchMOSFET
FDD8896 / FDU8896 November 2004 FDD8896 / FDU8896 ® N-Channel PowerTrench MOSFET 30V, 94A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to r = 5.7mΩ, V = 10V, I = 35A DS(ON) GS D improve the overall efficiency of DC/DC converters using r = 6.8mΩ, V = 4.5V, I = 35A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) Low gate charge Applications High power and current handling capability • DC/DC converters D D G G I-PAK S (TO-251AA) D-PAK TO-252 S G DS (TO-252) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 94 A Continuous (T = 25 C, V = 10V) (Note 1) C GS o I Continuous (T = 25 C, V = 4.5V) (Note 1) 85 A D C GS o o Continuous (T = 25 C, V = 10V, with R = 52 C/W) 17 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 2) 168 mJ AS Power dissipation 80 W P D o o Derate above 25C0.53W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252, TO-251 1.88 C/W θJC o R Thermal Resistance Junction to Ambient TO-252, TO-251 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA ©2004 FDD8896 / FDU8896 Rev. C1
