IC Phoenix
 
Home ›  FF7 > FDD6632,N-Channel Logic Level UltraFET ?Trench Power MOSFET 30V, 9A, 90mOhm
FDD6632 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FDD6632FAIRCHILPN/a150avaiN-Channel Logic Level UltraFET ?Trench Power MOSFET 30V, 9A, 90mOhm


FDD6632 ,N-Channel Logic Level UltraFET ?Trench Power MOSFET 30V, 9A, 90mOhmfeatures low gate charge while maintainingr = 0.058Ω (Typ), V = 10V, I = 9Alow on-resistance. DS(O ..
FDD6635 ,35V N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDD6637 ,-35V P-Channel PowerTrench?MOSFETApplications • Inverter • Power Supplies DDGG SD-PAKTO-252S(TO-252) oAbsolute Maximum Ratings ..
FDD6637 ,-35V P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6644 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 67 A, 30 V. R = 8.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDD6644 ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FOA3251B1 ,High Speed Clock and Data Recovery for Fiber Optic Applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
FOD053L ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD053LR1 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORFEATURES•Low power consumption• High speed •Available in single channel 8-pin DIP (FOD250L), 8-pin ..
FOD053LR2 ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTORAPPLICATIONS• Line receivers • Pulse transformer replacement• High speed logic ground isolation: LV ..
FOD053LV ,SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR LVTTL/LVCMOS 3.3VHIGH SPEED TRANSISTOR OPTOCOUPLERSSINGLE- ..
FOD070LR1 ,8-Pin SOIC Single-Channel Low Current High Gain Split Darlington Output OptocouplerAPPLICATIONS • Digital logic ground isolation – LVTTL/LVCMOS•Telephone ring detector• EIA-RS-232C l ..


FDD6632
N-Channel Logic Level UltraFET ?Trench Power MOSFET 30V, 9A, 90mOhm
FDD6632 June 2002 FDD6632 ® N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mΩ General Description Features This device employs a new advanced trench MOSFET Fast switching technology and features low gate charge while maintaining r = 0.058Ω (Typ), V = 10V, I = 9A low on-resistance. DS(ON) GS D Optimized for switching applications, this device improves r = 0.090Ω (Typ), V = 4.5V, I = 6A DS(ON) GS D the overall efficiency of DC/DC converters and allows Q (Typ) = 2.6nC, V = 5V operation to higher switching frequencies. g(TOT) GS Q (Typ) = 0.8nC gd Formerly developmental type 83317 C (Typ) = 255pF ISS Applications • DC/DC converters D D G G S D-PAK S TO-252 (TO-252) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 9A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 4.5V) 6 A D C GS o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 4 A C GS θJA Pulsed Figure 4 A Power dissipation 15 W P D o o Derate above 25C0.1W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 10 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD6632 FDD6632 TO-252AA 330mm 16mm 2500 units ©2002 FDD6632 Rev. B
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED