FDD6030BL ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 42 A, 30 V R = 16 mΩ @ V = 10 V DS(ON) GSspecifi ..
FDD6030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral DescriptionThese N-Channel logic level enhancement mode power 12 A, 30 V. R = 0.0145 Ω @ ..
FDD6035 ,N-Channel/ Logic Level/ PowerTrench MOSFETApplications• High performance trench technology for extremelylow R .• DC/DC converter DS(ON)• Moto ..
FDD6035 ,N-Channel/ Logic Level/ PowerTrench MOSFETF FDD6690A DD6035ALSeptember 2001FDD6035AL N-Channel, Logic Level, PowerTrench MOSFET
FDD6035 ,N-Channel/ Logic Level/ PowerTrench MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET is produced using• 46 A, 30 V. R = 0.0125 Ω @ ..
FDD6035AL ,N-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET is produced using• 46 A, 30 V. R = 0.0125 Ω @ ..
FN4F3M ,RESISTOR BUILT-IN TYPE PNP TRANSISTORDATA SHEETSILICON TRANSISTORFN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR
FDD6030BL
30V N-Channel PowerTrench MOSFET
FDD6030BL/FDU6030BL July 2001 FDD6030BL/FDU6030BL Ò Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 42 A, 30 V R = 16 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 22 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge (22 nC typical) low gate charge, low RDS( ON) , fast switching speed and extremely low R in a small package. DS(ON) · Fast switching Applications · High performance trench technology for extremely · DC/DC converter low R DS(ON) · Motor drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS ID Continuous Drain Current @TC=25°C (Note 3) 42 A @T =25°C (Note 1a) 10 A Pulsed (Note 1a) 100 P W D Power Dissipation @T =25°C (Note 3) 50 C @TA=25°C (Note 1a) 3.8 @T =25°C (Note 1b) 1.6 A T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 3.0 °C/W qJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W qJA RqJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6030BL FDD6030BL D-PAK (TO-252) 13’’ 12mm 2500 units FDU6030BL FDU6030BL I-PAK (TO-251) Tube N/A 75 Ó2001 FDD6030BL/FDU6030BL Rev C(W)
