FDD5N50NZ ,N-Channel UniFETTM II MOSFET 500V, 4A, 1.5?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power Supply DGSD-PAKoMOSFET Maximum Rating ..
FDD5N53TM , N-Channel MOSFET 530V, 4A, 1.5Ω
FDD6030BL ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 42 A, 30 V R = 16 mΩ @ V = 10 V DS(ON) GSspecifi ..
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FDD6035 ,N-Channel/ Logic Level/ PowerTrench MOSFETApplications• High performance trench technology for extremelylow R .• DC/DC converter DS(ON)• Moto ..
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FDD5N50NZ
N-Channel UniFETTM II MOSFET 500V, 4A, 1.5?
TM FDD5N50NZ N-Channel UniFET II MOSFET March 2013 FDD5N50NZ TM N-Channel UniFET II MOSFET 500 V, 4 A, 1.5 Features Description TM ® •R = 1.38 (Typ.) @ V = 10 V, I = 2 A UniFET II MOSFET is Fairchild Semiconductor ’s high volt- DS(on) GS D age MOSFET family based on advanced planar stripe and • Low Gate Charge (Typ. 9 nC) DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and • Low C (Typ. 4 pF) rss also provides superior switching performance and higher ava- • 100% Avalanche Tested lanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM • Improved dv/dt Capability surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat • ESD Imoroved Capability panel display (FPD) TV power, ATX and electronic lamp ballasts. • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply D G S D-PAK o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDD5N50NZ Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±25 V GSS o - Continuous (T = 25 C) 4 C I Drain Current A D o - Continuous (T = 100 C) 2.4 C I Drain Current - Pulsed (Note 1) 16 A DM E Single Pulsed Avalanche Energy (Note 2) 304 mJ AS I Avalanche Current (Note 1) 4 A AR E Repetitive Avalanche Energy (Note 1) 6.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 62 W C P Power Dissipation D o o - Derate above 25 C 0.5 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Unit FDD5N50NZ R Thermal Resistance, Junction to Case, Max. 2.0 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 90 JA 1 ©2010 FDD5N50NZ Rev. C0
