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FDD5614PFSC N/a134avai60V P-Channel PowerTrench MOSFET


FDD5614P ,60V P-Channel PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –15 A, –60 V. R = 100 mΩ @ V = –10 VDS(ON ..
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FDD5614P
60V P-Channel PowerTrench MOSFET
FDD5614P February 2001 FDD5614P     60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high • –15 A, –60 V. R = 100 mΩ @ V = –10 V DS(ON) GS voltage PowerTrench process. It has been optimized R = 130 mΩ @ V = –4.5 V DS(ON) GS for power management applications. • Fast switching speed Applications • DC/DC converter • High performance trench technology for extremely low R DS(ON) • Power management • Load switch • High power and current handling capability S D G G S TO-252 D o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –60 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 3) A D –15 – Pulsed (Note 1a) –45 P Power Dissipation for Single Operation (Note 1) 42 W D (Note 1a) 3.8 (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range °C J STG –55 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 3.5 R °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5614P FDD5614P 13’’ 12mm 2500 units 2001 FDD5614P Rev C(W)
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