FDD306P ,-12V P-Channel 1.8V Specified PowerTrench MOSFETGeneral DescriptionDS(ON) GS Fast switching speedThis P-Channel 1.8V Specified MOSFET uses Fairchild ..
FDD3510H ,80V Dual N & P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FDD3570 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable RDS(ON) • High pe ..
FDD3580 ,80V N-Channel PowerTrench MOSFETfeatures faster switching and lower gatechange than other MOSFETs with comparable R • Fast switchin ..
FDD3670 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 34 A, 100 V. R = 32 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD3672 ,N-Channel UltraFET ?Trench MOSFET 100V, 44A, 28mOhmFDD3672June 2002FDD3672®N-Channel UltraFET Trench MOSFET100V, 44A, 28mΩ
FN1L3N-T2B ,Compound transistorDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FN1L3Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
. _ R1 _
-0.15 C ..
FN1L3Z-T1B ,Compound transistorDATA SHEET
SILICON TRANSISTOR
MEDIUM SPEED SWITCHING
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
..
FN1L3Z-T2B ,Compound transistorFEATURES
in millimeters ( O Resistor Built-in TYPE T C
B
2.8+,0.2 R1 = 4.7 k9
. _ R1 _
-0.15 C ..
FN1L4L ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FN1L4L-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "C)
CHARACTERISTIC SYMBOL . . ' . TEST CONDITIONS
' Colle ..
FDD306P
-12V P-Channel 1.8V Specified PowerTrench MOSFET
® FDD306P P-Channel 1.8V Specified PowerTrench MOSFET January 2005 FDD306P ® P-Channel 1.8V Specified PowerTrench MOSFET Features Applications ■ –6.7 A, –12 V. R = 28 mΩ @ V = –4.5 V ■ DC/DC converter DS(ON) GS R = 41 mΩ @ V = –2.5 V DS(ON) GS R = 90 mΩ @ V = –1.8 V General Description DS(ON) GS ■ Fast switching speed This P-Channel 1.8V Specified MOSFET uses Fairchild’s ■ High performance trench technology for extremely advanced low voltage PowerTrench process. It has been opti- low R DS(ON) mized for battery power management. ■ High power and current handling capability S D G G S TO-252 D Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –12 V DSS V Gate-Source Voltage ±8V GSS I Drain Current – Continuous (Note 3) –6.7 A D – Pulsed (Note 1a) –54 P Power Dissipation for Single Operation (Note 1) 52 W D (Note 1a) 3.8 (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 2.9 °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD306P FDD306P 13’’ 12mm 2500 units ©2005 1 FDD306P Rev. C
