FDD2572_F085 ,N-Channel PowerTrench?MOSFET 150V, 29A, 54m?®FDD2572_F085 N-Channel PowerTrench MOSFET ..
FDD2572_F085 ,N-Channel PowerTrench?MOSFET 150V, 29A, 54m?Applicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDD2582 ,N-Channel PowerTrench MOSFET 150V, 21A, 0.066 OhmApplicationsr = 58mΩ (Typ.), V = 10V, I = 7A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDD2582 ,N-Channel PowerTrench MOSFET 150V, 21A, 0.066 OhmFDD2582September 2002FDD2582®N-Channel PowerTrench MOSFET150V, 21A, 66mΩ
FDD2612 ,200V N-Channel PowerTrench MOSFETApplications• Fast switching speed• DC/DC converter• Low gate charge (8nC typical)DDGGSTO-252SoAbso ..
FDD26AN06A0 ,60V N-Channel PowerTrench MOSFET 60V, 36A, 26mOApplications•r = 20mΩ (Typ.), V = 10V, I = 36A Motor / Body Load ControlDS(ON) GS DQ (tot) = 13n ..
FN1F4N-T2B ,Compound transistorFEATURES
0 Resistors Built-in TYPE
RI=22k?
R2 =47 kf2
R2 E
o Complementary to FA1F4N
..
FN1F4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
- J, CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS _
..
FN1L3M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FN1L3M-T1B ,Compound transistorNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FN1L3N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FN1L3N-T1B ,Compound transistorDATA SH E ET
NEC SILICON TRANSISTOR
or"''"""" d __ qt-ri-- . . F FN1lllL3lllNl
MEDIUM SPEED ..
FDD2572_F085
N-Channel PowerTrench?MOSFET 150V, 29A, 54m?
® FDD2572_F085 N-Channel PowerTrench MOSFET S November 2008 FDD2572_F085 ® N-Channel PowerTrench MOSFET 150V, 29A, 54mΩ Features Applications r = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 26nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection Systems Qualified to AEC Q101 RoHS Compliant42V Automotive Load Control Formerly developmental type 82860 Electronic Valve Train Systems DRAIN D (FLANGE) GATE G SOURCE TO-252AA FDD SERIES S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 29 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 20 A D C GS o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 4 amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 36 mJ AS Power dissipation 135 W P D o o Derate above 25C0.9W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 1.11 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2008 1 FDD2572_F085 Rev.A
