FDD2570 ,150V N-Channel PowerTrench TM MOSFETFeaturesThis N-Channel MOSFET has been designed• 4.7 A, 150 V. R = 80 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDD2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmFDD2572 / FDU2572July 2002FDD2572 / FDU2572®N-Channel UltraFET Trench MOSFET150V, 29A, 54mΩ
FDD2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmApplicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDD2572_F085 ,N-Channel PowerTrench?MOSFET 150V, 29A, 54m?®FDD2572_F085 N-Channel PowerTrench MOSFET ..
FDD2572_F085 ,N-Channel PowerTrench?MOSFET 150V, 29A, 54m?Applicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDD2582 ,N-Channel PowerTrench MOSFET 150V, 21A, 0.066 OhmApplicationsr = 58mΩ (Typ.), V = 10V, I = 7A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FN1F4N , MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
FN1F4N-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC)
_ CHARACTERISTIC SYMBOL MIN. 4 TYP. MAX. UNIT TEST CONDI ..
FN1F4N-T2B ,Compound transistorFEATURES
0 Resistors Built-in TYPE
RI=22k?
R2 =47 kf2
R2 E
o Complementary to FA1F4N
..
FN1F4Z-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
- J, CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS _
..
FN1L3M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FN1L3M-T1B ,Compound transistorNEC
DATA SH E ET
ELECTRON DEVICE
"
,
SILICON TRANSISTOR
FN1L3M
MEDIUM SPEED SWIT ..
FDD2570
150V N-Channel PowerTrench TM MOSFET
FDD2570 February 2001 FDD2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 4.7 A, 150 V. R = 80 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 90 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Low gate charge These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Fast switching speed R specifications. DS(ON) • High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low R DS(ON) (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability. D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V V Drain-Source Voltage 150 DSS V V Gate-Source Voltage GSS ±20 A I Drain Current – Continuous (Note 1a) 4.7 D Drain Current – Pulsed 30 P W D Maximum Power Dissipation @ T = 25°C (Note 1) 70 C 3.2 @ T = 25°C (Note 1a) A 1.3 @ T = 25°C (Note 1b) A °C T , T Operating and Storage Junction Temperature Range -55 to +150 J STG Thermal Characteristics R °C/W θJC Thermal Resistance, Junction-to-Case (Note 1) 1.8 R °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD2570 FDD2570 13’’ 16mm 2500 units 2001 FDD2570 Rev C(W)
