| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDD10AN06AO |
FAI|Fairchild Semiconductor |
N/a |
200 |
 |
|
FDD120AN15A0 ,N-Channel PowerTrench MOSFET, 150V, 14A, 0.120 OhmsApplications•r = 101mΩ (Typ.), V = 10V, I = 4A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDD13AN06A0 ,N-Channel PowerTrench MOSFET, 60V, 50A, 0.0135Applications•r = 11.5mΩ (Typ.), V = 10V, I = 50A Motor / Body Load ControlDS(ON) GS DQ (tot) = 2 ..
FDD14AN06LA0 ,N-Channel Power Trench #174 MOSFET, 60V, 50A, 14mOhmsApplications•r = 12.8mΩ (Typ.), V = 5V, I = 50A Motor / Body Load ControlDS(ON) GS DQ (tot) = 25 ..
FDD16AN08A0 ,N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhmApplications•r = 13mΩ (Typ.), V = 10V, I = 50A 42V Automotive Load ControlDS(ON) GS DQ (tot) = 3 ..
FDD20AN06A0 ,N-Channel PowerTrench MOSFETApplications•r = 17mΩ (Typ.), V = 10V, I = 45A Motor / Body Load ControlDS(ON) GS DQ (tot) = 15n ..
FN1A4P ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C) N
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Colle ..
FN1A4P-T1B ,Compound transistorFEATURES
PAcKAfE.PPiiNsioNs __' o Resistors Built-in TYPE
m millimeters
c
2.8K0.2 2 f B -
0. ..
FN1A4P-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) N
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Colle ..
