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Partno	Mfg	Dc	Qty	Available	Descript
FDD03-9733	CHINFA	N/a	87

FDD044AN03L ,30V N-Channel PowerTrench MOSFETApplications•r = 3.6mΩ (Typ.), V = 4.5V, I = 35A  12V Automotive Load ControlDS(ON) GS DQ = 48nC ..
FDD068AN03L ,N-Channel PowerTrench MOSFETApplications•r = 5.7mΩ (Typ.), V = 4.5V, I = 35A  12V Automotive Load ControlDS(ON) GS DQ = 24nC ..
FDD107AN06LA0 ,60V N-Channel PowerTrench MOSFETApplications•r = 92mΩ (Typ.), V = 5V, I = 10A  Motor / Body Load ControlDS(ON) GS DQ (tot) = 4.2n ..
FDD10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 50A, 10.5mOhmFDD10AN06A0August 2002FDD10AN06A0®N-Channel PowerTrench MOSFET60V, 50A, 10.5mΩ
FDD10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 50A, 10.5mOhmApplications•r = 9.4mΩ (Typ.), V = 10V, I = 50A  Motor / Body Load ControlDS(ON) GS DQ (tot) = 28 ..
FN1A4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "ty CHARACTERISTIC SYMBOL . . . TEST CONDITIONS Collector ..
FN1A4M-T2B ,Compound transistorFEATURES PACKAGE DIMENSIONS ir,' o Resistors Built-in TYPE in millimeters _ C 2.8k0.2 B l, _ . ..
FN1A4P ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C) N CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS Colle ..