FDC855N ,30V Single N-Channel, Logic Level, PowerTrench?MOSFETapplications where in-line power standard SO-8; low profile (1mm thick).loss is critical. RoHS Com ..
FDC855N ,30V Single N-Channel, Logic Level, PowerTrench?MOSFETapplications. Utilizing Fairchild ® Max r = 36mΩ at V = 4.5V, I = 5.3ADS(on) GS D Semiconductor’s ..
FDC9216 , FLOPPY DISK DATA SEPARATOR FDDS
FDC9216 , FLOPPY DISK DATA SEPARATOR FDDS
FDC9216B , FLOPPY DISK DATA SEPARATOR FDDS
FDC9216B , FLOPPY DISK DATA SEPARATOR FDDS
FN1A3Q ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T1B ,Compound transistorDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
CHARACTiiRISTlC
SYMBOL
TEST CONDITIONS
Collecto ..
FN1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FN1A4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FN1A4M-T2B ,Compound transistorFEATURES
PACKAGE DIMENSIONS ir,' o Resistors Built-in TYPE
in millimeters _ C
2.8k0.2 B
l, _ . ..
FDC855N
30V Single N-Channel, Logic Level, PowerTrench?MOSFET
® FDC855N N-Channel, Logic Level, PowerTrench MOSFET January 2008 FDC855N tm ® Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27mΩ Features General Description Max r = 27mΩ at V = 10V, I = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for DS(on) GS D low voltage and battery powered applications. Utilizing Fairchild ® Max r = 36mΩ at V = 4.5V, I = 5.3A DS(on) GS D Semiconductor’s advanced PowerTrench process, this device possesses minimized on-state resistance to optimize the power TM SuperSOT -6 package: small footprint (72% smaller than consumption. They are ideal for applications where in-line power standard SO-8; low profile (1mm thick). loss is critical. RoHS Compliant Application Power Management in Notebook, Hard Disk Drive S D D D D D D TM SuperSOT -6 G D S G D Pin 1 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25°C (Note 1a) 6.1 A I A D -Pulsed 20 Power Dissipation (Steady State) (Note 1a) 1.6 P W D Power Dissipation (Steady State) (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 30 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .855 FDC855N SuperSOT-6 7” 8 mm 3000 units 1 ©2008 FDC855N Rev.C
