FDC796N ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge • DC/DC converter • High power and current handling capability • P ..
FDC855N ,30V Single N-Channel, Logic Level, PowerTrench?MOSFETapplications where in-line power standard SO-8; low profile (1mm thick).loss is critical. RoHS Com ..
FDC855N ,30V Single N-Channel, Logic Level, PowerTrench?MOSFETapplications. Utilizing Fairchild ® Max r = 36mΩ at V = 4.5V, I = 5.3ADS(on) GS D Semiconductor’s ..
FDC9216 , FLOPPY DISK DATA SEPARATOR FDDS
FDC9216 , FLOPPY DISK DATA SEPARATOR FDDS
FDC9216B , FLOPPY DISK DATA SEPARATOR FDDS
FN1A3Q ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T1B ,Compound transistorDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
CHARACTiiRISTlC
SYMBOL
TEST CONDITIONS
Collecto ..
FN1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FN1A4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FN1A4M-T2B ,Compound transistorFEATURES
PACKAGE DIMENSIONS ir,' o Resistors Built-in TYPE
in millimeters _ C
2.8k0.2 B
l, _ . ..
FDC796N
30V N-Channel PowerTrench MOSFET
FDC796N February 2004 FDC796N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 12.5 A, 30 V. R = 9 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 12 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely low gate charge, low R and fast switching speed. DS(ON) low R DS(ON) Applications • Low gate charge • DC/DC converter • High power and current handling capability • Power management • Fast switching speed. • Load switch Bottom Drain G 6 1 S S 2 5 S S 4 3 S TM SuperSOT-6 FLMP o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage GSS ± 20 I Drain Current – Continuous (Note 1a) 12.5 A D – Pulsed 40 P D Maximum Power Dissipation (Note 1a) 2 W (Note 1b) 1.1 T , T Operating and Storage Junction Temperature Range −55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 60 R °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 111 θJA R Thermal Resistance, Junction-to-Case 0.5 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .796 FDC796N 7’’ 8mm 3000 units FDC796N Rev D (W) 2004
