FDC697P ,P-Channel 1.8V PowerTrench MOSFETApplications low R DS(ON)• Fast switching speed • Battery management • Load Switch • FLMP SuperSOT ..
FDC699P ,P-Channel 2.5V Power Mosfet MOSFETApplications • FLMP SuperSOT-6 package: Enhanced thermal • Battery management performance in indus ..
FDC796N ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge • DC/DC converter • High power and current handling capability • P ..
FDC855N ,30V Single N-Channel, Logic Level, PowerTrench?MOSFETapplications where in-line power standard SO-8; low profile (1mm thick).loss is critical. RoHS Com ..
FDC855N ,30V Single N-Channel, Logic Level, PowerTrench?MOSFETapplications. Utilizing Fairchild ® Max r = 36mΩ at V = 4.5V, I = 5.3ADS(on) GS D Semiconductor’s ..
FDC9216 , FLOPPY DISK DATA SEPARATOR FDDS
FN1A3Q ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T1B ,Compound transistorDATA SH E ET
SILICON TRANSISTOR
FN1A30.
ttatc
ELECTRON DEVICE,
MEDIUM SPEED SWITCHIN ..
FN1A3Q-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c)
CHARACTiiRISTlC
SYMBOL
TEST CONDITIONS
Collecto ..
FN1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FN1A4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "ty
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FN1A4M-T2B ,Compound transistorFEATURES
PACKAGE DIMENSIONS ir,' o Resistors Built-in TYPE
in millimeters _ C
2.8k0.2 B
l, _ . ..
FDC697P
P-Channel 1.8V PowerTrench MOSFET
FDC697P January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses • –8 A, –20 V R = 20 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage Power Trench R = 25 mΩ @ V = –2.5 V DS(ON) GS process. It has been optimized for battery power R = 35 mΩ @ V = –1.8 V DS(ON) GS management applications. • High performance trench technology for extremely Applications low R DS(ON) • Fast switching speed • Battery management • Load Switch • FLMP SuperSOT-6 package: Enhanced thermal • Battery protection performance in industry-standard package size G 6 1 S 5 S 2 S S 3 4 Bottom S Drain TM SuperSOT-6 FLMP o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current – Continuous (Note 1a) –8 A D – Pulsed –40 Power Dissipation (Note 1a) 2 P W D (Note 1b) 1.5 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 60 °C/W θJA (Note 1b) 111 R Thermal Resistance, Junction-to-Case 0.5 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .697 FDC697P 7’’ 8mm 3000 units FDC697P Rev C2 (W) 2004
