FDC6432SH ,12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Q Min ..
FDC645 ,N-Channel PowerTrench MOSFETApplications• Low gate charge (13 nC typical)• DC/DC converter• High power and current handling cap ..
FDC645N ,N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 5.5 A, 30 V. R = 30 mΩ @ V = 4.5 V DS(ON) GSsp ..
FDC645N_NL ,N-Channel PowerTrench MOSFETApplications • Low gate charge (13 nC typical) • DC/DC converter • High power and current handling ..
FDC6506 ,Dual P-Channel Logic Level PowerTrench MOSFETApplications than standard SO-8); low profile (1mm thick).• Load switch• Battery protection• P ..
FDC6506P ,Dual P-Channel Logic Level PowerTrench MOSFETGeneral DescriptionThese P-Channel logic level MOSFETs are produced using • -1.8 A, -30 V. R = 0.17 ..
FMX-2203 , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22SL , Ultra-Fast-Recovery Rectifier Diodes
FMX-22SL , Ultra-Fast-Recovery Rectifier Diodes
FMX-32S , Ultra-Fast-Recovery Rectifier Diodes
FDC6432SH
12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET
FDC6432SH April 2003 FDC6432SH 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET General Description Features This complementary P-Channel MOSFET with • SyncFET R = 90 mΩ @ V = 10 V DS(ON) GS SyncFET has been designed specifically to improve the 2.4 A, 30V R = 105 mΩ @ V = 4.5 V DS(ON) GS overall efficiency of DC/DC converters using either synchronous or conventional switching PWM • P channel R = 90 mΩ @ V = –4.5 V DS(ON) GS controllers. It has been optimized for providing an extremely low R in a small package. DS(ON) –2.5 A, –12V R = 125 mΩ @ V = –2.5 V DS(ON) GS R R = 220 mΩ @ V = –1.8 V DS(ON) GS Applications • Fast switching speed. DC/DC converter Power management • High performance trench technology for extremely low R DS(ON) Q2(P) D2 G2 S1 D1,2 4 3 D1 S2 2 S1 5 G2 S2 TM SuperSOT -6 G1 Pin 1 1 6 G1 D1,2 Q1(N) SuperSOT™-6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units Q1 (N) Q2 (P) V Drain-Source Voltage 30 –12 V DSS V Gate-Source Voltage ±16 ±8 V GSS I Drain Current– Continuous (Note 1a) 2.4 –2.5 A D – Pulsed 7 –7 Power Dissipation for Single Operation (Note 1a) 1.3 P D W (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 100 R °C/W θJA (Note 1b) 175 R Thermal Resistance, Junction-to-Case (Note 1) 60 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .432 FDC6432SH 7’’ 8mm 3000 units FDC6432SH Rev B (W) 2003 Fairchild Semiconductor Corp.
