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FDC6392SFAIRCHILN/a70avai20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDC6392SFAIRCHILDN/a9000avai20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode


FDC6392S ,20V Integrated P-Channel PowerTrench MOSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDC6392S ,20V Integrated P-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast • Compact industry standard SuperSOT -6 package switching, low gate charge MOSFET w ..
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FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchOctober 2001FDC6401N
FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFDC6401NFDC6401N® ®Dual N-Channel 2.5V Specified This Dual N-Channel MOSFET has been designed• 3.0 ..
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FDC6392S
20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDC6392S April 2002 FDC6392S     20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a • –2.2 A, –20V. RDS(ON) = 150 mΩ @ VGS = –4.5V very low forward voltage drop Schottky barrier rectifier RDS(ON) = 200 mΩ @ VGS = –2.5V in an SSOT-6 package. • Low Gate Charge (3.7nC typ) This device is designed specifically as a single package  solution for DC to DC converters. It features a fast • Compact industry standard SuperSOT -6 package switching, low gate charge MOSFET with very low on- Schottky: state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC • V < 0.45 V @ 1 A F converter topologies. D2 S1 D1 1 6 G2 2 5 S2 TM SuperSOT -6 G1 Pin 1 3 4 SuperSOT™-6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V MOSFET Drain-Source Voltage –20 V DSS V MOSFET Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) –2.2 A D – Pulsed –6 P Power Dissipation for Single Operation (Note 1a) 0.96 W D (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C V Schottky Repetitive Peak Reverse Voltage 20 V RRM I Schottky Average Forward Current (Note 1a) 1 A O Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 130 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 60 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .392 FDC6392S 7’’ 8mm 3000 units FDC6392S Rev C(W) 2002
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