IC Phoenix
 
Home ›  FF6 > FDC638P_NL,Single P-Channel 2.5V Specified PowerTrench MOSFET
FDC638P_NL Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FDC638P_NLFAIRCHILN/a1082avaiSingle P-Channel 2.5V Specified PowerTrench MOSFET


FDC638P_NL ,Single P-Channel 2.5V Specified PowerTrench MOSFETapplications: load switching and power management, low R DS(ON)battery charging circuits, and DC/DC ..
FDC6392S ,20V Integrated P-Channel PowerTrench MOSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDC6392S ,20V Integrated P-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast • Compact industry standard SuperSOT -6 package switching, low gate charge MOSFET w ..
FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplicationsON)DS(nC)GSDS(ON)GSDS(ON)
FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchOctober 2001FDC6401N
FDC6401N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFDC6401NFDC6401N® ®Dual N-Channel 2.5V Specified This Dual N-Channel MOSFET has been designed• 3.0 ..
FMW-24H , Schottky Barrier Diodes
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FMX-12S , Ultra-Fast-Recovery Rectifier Diodes
FMX-2203 , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes
FMX-22S , Ultra-Fast-Recovery Rectifier Diodes


FDC638P_NL
Single P-Channel 2.5V Specified PowerTrench MOSFET
FDC638P September 2001 FDC638P Ò Ò P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced · –4.5 A, –20 V. R = 48 mW @ V = –4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced RDS(ON) = 65 mW @ V GS = –2.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain · Low gate charge (10 nC typical) low gate charge for superior switching performance These devices are well suited for battery power · High performance trench technology for extremely applications: load switching and power management, low R DS(ON) battery charging circuits, and DC/DC conversion. · SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) S D 1 6 D 5 2 TM G SuperSOT -6 D pin 1 D 3 3 4 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current – Continuous (Note 1a) –4.5 A D – Pulsed –20 P Power Dissipation for Single Operation (Note 1a) 1.6 D W (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 qJA °C/W RqJC Thermal Resistance, Junction-to-Case (Note 1) 30 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .638 FDC638P 7’’ 8mm 3000 units Ó2001 FDC638P Rev F1 (W)
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED