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FDC637ANFAIRCHILDN/a3000avaiSingle N-Channel, 2.5V Specified PowerTrench TM MOSFET


FDC637AN ,Single N-Channel, 2.5V Specified PowerTrench TM MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. R = 0.024 Ω @ V = 4.5 Vusing ..
FDC637BNZ ,20V N-Channel 2.5V Specified PowerTrench?MOSFETGeneral Description„ Max r = 24mΩ at V = 4.5V, I = 6.2A This N-Channel 2.5V specified MOSFET is pro ..
FDC638APZ ,-20V P-Channel 2.5V PowerTrench?Specified MOSFETGeneral Description„ Max r = 43mΩ at V = –4.5V, I = –4.5AThis P-Channel 2.5V specified MOSFET is pr ..
FDC638P ,P-Channel 2.5V PowerTrench Specified MOSFETFeatures This P -Channel 2.5V specified MOSFET is produced • –4.5 A, –20 V. R = 48 mΩ @ V = –4.5 V ..
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FDC637AN
Single N-Channel, 2.5V Specified PowerTrench TM MOSFET
FDC637AN November 1999 FDC637AN TM Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. R = 0.024 Ω @ V = 4.5 V using Fairchild Semiconductor's advanced DS(on) GS PowerTrench process that has been especially tailored R = 0.032 Ω @ V = 2.5 V DS(on) GS to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Fast switching speed. These devices have been designed to offer exceptionalLow gate charge (10.5nC typical). power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. High performance trench technology for extremely low R . DS(ON) Applications TM SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). • DC/DC converter Load switch Battery Protection S 1 6 D D 2 5 G D 3 4 TM D SuperSOT -6 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter FDC637AN Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current - Continuous (Note 1a) 6.2 A D Drain Current - Pulsed 20 P Power Dissipation for Single Operation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 Rθ °C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W θJC Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .637 FDC637AN 7’’ 8mm 3000 units 1999 FDC637AN, Rev. C
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