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FDC634PFSC ?N/a1081avaiP-Channel 2.5V Specified PowerTrench MOSFET


FDC634P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET uses • –3.5 A, –20 V. R = 80 mΩ @ V = –4.5 V DS(ON) ..
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FDC634P
P-Channel 2.5V Specified PowerTrench MOSFET
FDC634P September 2001 FDC634P Ò Ò P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses · –3.5 A, –20 V. R = 80 mW @ V = –4.5 V DS(ON) GS Fairchild’s low voltage PowerTrench process. It has R = 110 mW @ V = –2.5 V DS(ON) GS been optimized for battery power management applications. · Low gate charge (7.2 nC typical) Applications · High performance trench technology for extremely low R DS(ON) · Battery management · Load switch · Battery protection S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) –3.5 A D – Pulsed –20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 RqJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .634 FDC634P 7’’ 8mm 3000 units Ó2001 FDC634P Rev E (W)
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