Partno |
Mfg |
Dc |
Qty |
Available | Descript |
FDC634P/634 |
FAIRCHIL|Fairchild Semiconductor |
N/a |
11300 |
|
|
FDC634P_NL ,P-Channel 2.5V Specified PowerTrench®, MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Battery management • ..
FDC636P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC637AN ,Single N-Channel, 2.5V Specified PowerTrench TM MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. R = 0.024 Ω @ V = 4.5 Vusing ..
FDC637BNZ ,20V N-Channel 2.5V Specified PowerTrench?MOSFETGeneral Description Max r = 24mΩ at V = 4.5V, I = 6.2A This N-Channel 2.5V specified MOSFET is pro ..
FDC638APZ ,-20V P-Channel 2.5V PowerTrench?Specified MOSFETGeneral Description Max r = 43mΩ at V = –4.5V, I = –4.5AThis P-Channel 2.5V specified MOSFET is pr ..
FMV13N60ES , N-CHANNEL SILICON POWER MOSFET
FMV16N60ES , N-CHANNEL SILICON POWER MOSFET
FMV19N60ES , N-CHANNEL SILICON POWER MOSFET