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FDC634ROHMN/a18000avaiP-Channel Enhancement Mode Field Effect Transistor


FDC634 ,P-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC634P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET uses • –3.5 A, –20 V. R = 80 mΩ @ V = –4.5 V DS(ON) ..
FDC634P_NL ,P-Channel 2.5V Specified PowerTrench&#174, MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Battery management • ..
FDC636P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDC637AN ,Single N-Channel, 2.5V Specified PowerTrench TM MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. R = 0.024 Ω @ V = 4.5 Vusing ..
FDC637BNZ ,20V N-Channel 2.5V Specified PowerTrench?MOSFETGeneral Description„ Max r = 24mΩ at V = 4.5V, I = 6.2A This N-Channel 2.5V specified MOSFET is pro ..
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FDC634
P-Channel Enhancement Mode Field Effect Transistor
November 1997 FDC634P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power -3.5 A, -20 V.  R = 0.080 W @ V = -4.5 V DS(ON) GS field effect transistors are produced using Fairchild's R = 0.110 W @ V = -2.5 V. DS(ON) GS proprietary, high cell density, DMOS technology. This very TM high density process is especially tailored to minimize SuperSOT -6 package design using copper lead frame for superior thermal and electrical capabilities. on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and High density cell design for extremely low R . DS(ON) notebook computer power management and other battery powered circuits where high-side switching, and low in-line Exceptional on-resistance and maximum DC current power loss are needed in a very small outline surface capability. mount package. TM TM SuperSOT -6 SuperSOT -8 SO-8 SOT-223 SOIC-16 SOT-23 S 1 6 D D 2 5 G D pin 1 3 3 4 TM D SuperSOT -6 Absolute Maximum RatingsT = 25°C unless otherwise note A Symbol Parameter FDC634P Units V Drain-Source Voltage -20 V DSS Gate-Source Voltage - Continuous ±8 V V GSS I Drain Current - Continuous (Note 1a) -3.5 A D - Pulsed -11 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W qJC © 1997 FDC634P Rev.C .634
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