FDC6318P ,Dual P-Channel 1.8V PowerTrench Specified MOSFETApplications low R DS(ON)• Power management TM• SuperSOT -6 package: small footprint (72% • Load sw ..
FDC6320 ,Dual N & P Channel / Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6320C ,Dual N & P Channel , Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6320C ,Dual N & P Channel , Digital FETapplications. Since bias resistors are notGate-Source Zener for ESD ruggedness.required, this dual ..
FDC6321C ,Dual N & P Channel , Digital FETGeneral Description Digital FETDual N & P C321C F O(T = 25 C unless otherwise noted )ATypeV VVo o ..
FDC6322C ,Dual N & P Channel , Digital FETFeaturesThese dual N & P Channel logic level enhancement mode fieldN-Ch 25 V, 0.22 A, R = 5 Ω @ V ..
FMS6501MSA28X ,12 Input 9 Output Video Switch Matrix with Input Clamp, Input Bias Circuitry, and Output DriversFeatures Description 12 x 9 Crosspoint Matrix The FMS6501 provides 12 inputs which can be routed to ..
FMS6502 ,8 Input, 6 Output Video Switch Matrix with Output DriversFeatures Description 8 x 6 Crosspoint Switch Matrix The FMS6502 provides eight inputs that can be r ..
FMS6502MTC24 , 8-Input, 6-Output Video Switch Matrix with Output Drivers, Input Clamp, and Bias Circuitry
FMS6502MTC24X , 8-Input, 6-Output Video Switch Matrix with Output Drivers, Input Clamp, and Bias Circuitry
FMS6502MTC24X , 8-Input, 6-Output Video Switch Matrix with Output Drivers, Input Clamp, and Bias Circuitry
FMS6502MTC24X , 8-Input, 6-Output Video Switch Matrix with Output Drivers, Input Clamp, and Bias Circuitry
FDC6318P
Dual P-Channel 1.8V PowerTrench Specified MOSFET
FDC6318P December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are • –2.5 A, –12 V. R = 90 mΩ @ V = –4.5 V DS(ON) GS produced using Fairchild Semiconductor's advanced R = 125 mΩ @ V = –2.5 V DS(ON) GS PowerTrench process that has been especially tailored R = 200 mΩ @ V = –1.8 V to minimize on-state resistance and yet maintain low DS(ON) GS gate charge for superior switching performance. • High performance trench technology for extremely Applications low R DS(ON) • Power management TM • SuperSOT -6 package: small footprint (72% • Load switch smaller than standard SO-8); low profile (1mm thick) D2 S1 4 3 D1 5 2 G2 6 1 S2 TM SuperSOT -6 G1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –12 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current – Continuous (Note 1a) –2.5 A D – Pulsed –7 Power Dissipation for Single Operation (Note 1a) 0.96 P W D (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 130 θJA Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .318 FDC6318P 13’’ 12mm 3000 units FDC6318P Rev D (W) 2001
