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FDC6305NFAIRCHILN/a737avaiDual N-Channel 2.5V Specified PowerTrench TM MOSFET


FDC6305N ,Dual N-Channel 2.5V Specified PowerTrench TM MOSFETFeatures• 2.7 A, 20 V. R = 0.08 Ω @ V = 4.5 VThese N-Channel low threshold 2.5V specifiedDS(ON) GS ..
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FDC6305N
Dual N-Channel 2.5V Specified PowerTrench TM MOSFET
FDC6305N March 1999 FDC6305N TM Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features • 2.7 A, 20 V. R = 0.08 Ω @ V = 4.5 V These N-Channel low threshold 2.5V specified DS(ON) GS MOSFETs are produced using Fairchild Semiconductor's R = 0.12 Ω @ V = 2.5 V DS(ON) GS advanced PowerTrench process that has been especially tailored to minimize on-state resistance and • Low gate charge (3.5nC typical). yet maintain low gate charge for superior switching performance. • Fast switching speed. Applications • High performance trench technology for extremely • Load switch low R . DS(ON) • DC/DC converter TM • Motor driving • SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). D2 4 S1 3 D1 5 2 G2 6 1 S2 TM SuperSOT -6 G1 T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 8V GSS ± I Drain Current - Continuous (Note 1a) 2.7 A D - Pulsed 8 P Power Dissipation for Single Operation (Note 1a) 0.96 W D (Note 1b) 0.9 (Note 1c) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 130 C/W JA ° θ R Thermal Resistance, Junction-to-Case (Note 1) 60 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .305 FDC6305N 7’’ 8mm 3000 units 1999 FDC6305N, Rev. C
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