FDC6304P ,Digital FET, Dual P-Channelapplications operation in 3V circuits. V < 1.5 V.such as notebook computers and cellular phones. ..
FDC6304P ,Digital FET, Dual P-ChannelElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDC6305N ,Dual N-Channel 2.5V Specified PowerTrench TM MOSFETFeatures• 2.7 A, 20 V. R = 0.08 Ω @ V = 4.5 VThese N-Channel low threshold 2.5V specifiedDS(ON) GS ..
FDC6306P ,Dual P-Channel 2.5V Specified PowerTrench TM MOSFETGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced• -1.9 A, -20 V. R = 0.170 Ω ..
FDC6308P ,Dual P-Channel 2.5V Specific PowerTrench TM MOSFET ..
FDC6310P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures These P-Channel 2.5V specified MOSFETs are • –2.2 A, –20 V. R = 125 mΩ @ V = –4.5 V DS(ON) ..
FMS6418AM16 ,Triple Video Driver with Selectable SD/HD Video Filters for RGB or YUV Signalsapplications A 2-to-1 multiplexer is provided on each filter channel. The • DC coupled input, AC co ..
FMS6418AM16X ,Triple Video Driver with Selectable SD/HD Video Filters for RGB or YUV SignalsFeatures Description• Three video anti-aliasing or reconstruction filters The FMS6418A offers compre ..
FMS6418AMTC14X ,Triple Video Driver with Selectable SD/HD Video Filters for RGB or YUV SignalsFeatures Description• Three video anti-aliasing or reconstruction filters The FMS6418A offers compre ..
FMS6418AMTC14X ,Triple Video Driver with Selectable SD/HD Video Filters for RGB or YUV Signalsapplications. This part consists of a triple 6th • 2:1 Mux inputs for multiple RGB/YUV inputs orde ..
FMS6419MSA28 ,Selectable RGB (YUV) HD/SD Video Filter Driver with Y, C, Composite Outputsapplications. This part consists of a triple 6th order • 2:1 Mux inputs for multiple RGB/YUV input ..
FMS6419MSA28X ,Selectable RGB (YUV) HD/SD Video Filter Driver with Y, C, Composite OutputsFeatures Description• Three channel video reconstruction filters The FMS6419 offers comprehensive fil ..
FDC6304P
Digital FET, Dual P-Channel
July 1997 FDC6304P Digital FET, Dual P-Channel General Description Features -25 V, -0.46 A continuous, -1.0 A Peak. These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS R = 1.5 W @ V = -2.7 V DS(ON) GS technology. This very high density process is tailored to minimize R = 1.1 W @ V = -4.5 V. DS(ON) GS on-state resistance at low gate drive conditions. This device is Very low level gate drive requirements allowing direct designed especially for application in battery power applications operation in 3V circuits. V < 1.5 V. such as notebook computers and cellular phones. This device GS(th) has excellent on-state resistance even at gate drive voltages as Gate-Source Zener for ESD ruggedness. low as 2.5 volts. >6kV Human Body Model. TM TM SuperSOT -6 SuperSOT -8 SO-8 SOIC-16 SOT-23 SOT-223 Mark: .304 3 4 5 2 1 6 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDC6304P Units V Drain-Source Voltage -25 V DSS V Gate-Source Voltage -8 V GSS I Drain Current - Continuous -0.46 A D - Pulsed -1 Maximum Power Dissipation (Note 1a) 0.9 W P D (Note 1b) 0.7 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 140 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W JC q © 1997 FDC6304P Rev.D
