FDC6036P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This dual P-Channel 1.8V specified MOSFET uses • –5 A, –20 V. R = 44 mΩ @ V = –4.5 V DS ..
FDC604P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –5.5 A, –20 V. R = 33 mΩ @ V = –4.5 VDS(ON) GSF ..
FDC606P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –6 A, –12 V. R = 26 mΩ @ V = –4.5 V DS(ON) GS ..
FDC608PZ ,-20V P-Channel 2.5V PowerTrench?Specified MOSFETapplications: load switching and power management, low R DS(ON)battery power circuits, and DC/DC c ..
FDC608PZ ,-20V P-Channel 2.5V PowerTrench?Specified MOSFETFeatures This P-Channel 2.5V specified MOSFET is produced • –5.8 A, –20 V. R = 30 mΩ @ V = –4.5 V ..
FDC610PZ ,-30V P-Channel PowerTrench?MOSFETapplications: High performance trench technology for extremely low rDS(on).load switching ..
FMS6408MTC14-1 ,Triple Video Filter Driver for RGB and YUV SignalsFeatures Description• 7.6MHz 5th order RGB/YUV/YC CV filters The FMS6408 provides three video signal ..
FMS6408MTC141X ,Triple Video Filter Driver for RGB and YUV SignalsApplicationschannels have DC restore circuitry to clamp the DC input • Cable set top boxeslevels du ..
FMS6410 ,Dual Channel Video Drivers with Integrated Filters and Composite Video Summerapplications. This part consists of two 4 order • Composite Video SummerButterworth 7.1MHz low pas ..
FMS6410BCS , Dual-Channel Video Drivers with Integrated Filters and Composite Video Summer
FMS6410BCSX , Dual-Channel Video Drivers with Integrated Filters and Composite Video Summer
FMS6410BCSX , Dual-Channel Video Drivers with Integrated Filters and Composite Video Summer
FDC6036P
P-Channel 1.8V Specified PowerTrench MOSFET
FDC6036P January 2004 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses • –5 A, –20 V. R = 44 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 64 mΩ @ V = –2.5 V DS(ON) GS Packaged in FLMP SSOT-6, the R and thermal DS(ON) properties of the device are optimized for battery power R = 95 mΩ @ V = –1.8 V DS(ON) GS management applications. • Low gate charge, High Power and Current handling Applications capability • Battery management/Charger Application • High performance trench technology for extremely • Load switch low R DS(ON) • FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact 4 3 2 5 1 6 Bottom Drain Contact o MOSFET Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current – Continuous (Note 1a) –5 A D – Pulsed –20 P D Power Dissipation for Dual Operation 1.8 W Power Dissipation for Single Operation (Note 1a) 1.8 (Note 1b) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 J stg °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 68 R °C/W θJA R Thermal Resistance, Junction-to-Case 1 θJC Package Marking and Ordering Information .036 FDC6036P 7’’ 8mm 3000 units FDC6036P Rev C2 (W) 2004
