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FDC602PFAIRCHILDN/a5331avaiP-Channel 2.5V PowerTrench Specified MOSFET


FDC602P ,P-Channel 2.5V PowerTrench Specified MOSFETFeatures This P-Channel 2.5V specified MOSFET uses a rugged • –5.5 A, –20 V R = 35 mΩ @ V = –4.5 V ..
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FDC602P
P-Channel 2.5V PowerTrench Specified MOSFET
FDC602P April 2001 FDC602P Ò Ò P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged · –5.5 A, –20 V R = 35 mW @ V = –4.5 V DS(ON) GS gate version of Fairchild’s advanced PowerTrench R = 50 mW @ V = –2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of gate drive voltage · Fast switching speed (2.5V – 12V). · High performance trench technology for extremely Applications low R DS(ON) · Battery management · Load switch · Battery protection S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±12 ID Drain Current – Continuous (Note 1a) –5.5 A – Pulsed –20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 30 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .602 FDC602P 7’’ 8mm 3000 units Ó2001 FDC602P Rev C(W)
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