FDC5612 ,60V N-Channel PowerTrench ?MOSFETFeaturesThis N-Channel MOSFET has been designed 4.3 A, 60 V. R = 0.055 Ω @ V = 10 VDS(ON) GSspecif ..
FDC5614P ,60V P-Channel Logic Level PowerTrench MOSFETFeatures This 60V P-Channel MOSFET uses Fairchild’s high • –3 A, –60 V. R = 0.105 Ω @ V = –10 V DS ..
FDC5614P_NL ,60V P-Channel Logic Level PowerTrench MOSFETApplications • High performance trench technology for extremely • DC-DC converters low R DS(ON)• L ..
FDC5661N , N-Channel Logic Level PowerTrench® MOSFET 60V, 4A, 60mΩ
FDC5661N_F085 ,60V N-Channel Logic Level PowerTrench?MOSFET.Features R = 47mΩ at V = 10V, I = 4.3A DC/DC converterDS(on) GS D R = 60mΩ at V = 4.5V, I = 4A ..
FDC6000NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FMS6400CSX ,Dual Channel Video Drivers with Integrated Filters and Composite Video SummerFeatures Description 7.1 MHz 5th order Y,C filters with composite summer The FMS6400 is a dual Y/C ..
FMS6400CSX ,Dual Channel Video Drivers with Integrated Filters and Composite Video SummerFMS6400 Dual Channel Video Drivers with Integrated Filters and Composite Video SummerSeptember 200 ..
FMS6403MTC20 ,Triple Video Drivers w/Selectable HD/Progressive/SD/ Bypass Filters for RGB and YPbPr Signalsapplications. This part consists of a triple 6th order filter 2:1 Mux inputs for YPbPr and RGB input ..
FMS6403MTC20X ,Triple Video Drivers w/Selectable HD/Progressive/SD/ Bypass Filters for RGB and YPbPr SignalsFMS6403 Triple Video Drivers w/Selectable HD/Progressive/SD/Bypass Filters for RGB and YPbPr Signa ..
FMS6406CS , Precision S-Video Filter with Summed Composite Output, Sound Trap, and Group Delay Compensation
FMS6407MTC20X ,Triple Video Drivers with Selectable HD/Progressive/SD/Bypass FiltersFeatures Description• Three video anti-aliasing or reconstruction filters The FMS6407 offers compreh ..
FDC5612
60V N-Channel PowerTrench ?MOSFET
FDC5612 February 2002 FDC5612 ® 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. R = 0.055 W @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 0.064 W @ V = 6 V. converters using either synchronous or conventional DS(ON) GS switching PWM controllers. Low gate charge (12.5nC typical). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON)Fast switching speed. specifications. High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low R . (even at very high frequencies), and DC/DC power supply DS(ON) designs with higher overall efficiency. TMSuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S 1 6 D D 2 5 G D 3 4 D TM SuperSOT -6 T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage 20 V GSS ± (Note 1a) ID Drain Current - Continuous 4.3 A Drain Current - Pulsed 20 P Power Dissipation for Single Operation (Note 1a) 1.6 W D (Note 1b) 0.8 C T , T Operating and Storage Junction Temperature Range -55 to +150 ° J stg Thermal Characteristics R (Note 1a) C/W JA Thermal Resistance, Junction-to-Ambient 78 ° θ R Thermal Resistance, Junction-to-Case (Note 1) 30 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .562 FDC5612 7’’ 8mm 3000 units © 2002 FDC5612 Rev. C1
