FDC2612 ,200V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 1.1 A, 200 V. R = 725 mΩ @ V = 10 V DS(ON) GSspe ..
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FDC2612
200V N-Channel PowerTrench MOSFET
FDC2612 February 2002 FDC2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 1.1 A, 200 V. R = 725 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has been optimized for low R DS(ON) low gate charge, low R and fast switching speed. DS(ON) • High power and current handling capability Applications • Fast switching speed • DC/DC converter • Low gate charge (8nC typical) S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 200 V DSS V Gate-Source Voltage V GSS ± 20 I Drain Current – Continuous (Note 1a) 1.1 A D – Pulsed 4 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range J STG −55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 RθJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .262 FDC2612 7’’ 8mm 3000 units FDC2612 Rev B3 (W) 2002
