FDB8896_NL ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 5.7mΩ , V = 10V, I = 35ADS(ON) ..
FDC15-48D12 , 15 WATT DC/DC CONVERTER, SINGLE & DUAL OUTPUTS
FDC2512 ,150V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 1.4 A, 150 V. R = 425 mΩ @ V = 10 V DS(ON) GSspe ..
FDC2612 ,200V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 1.1 A, 200 V. R = 725 mΩ @ V = 10 V DS(ON) GSspe ..
FDC2612 ,200V N-Channel PowerTrench MOSFETApplications • Fast switching speed • DC/DC converter • Low gate charge (8nC typical) SD1 6D2 5G ..
FDC3612 ,100V N-Channel PowerTrench MOSFETApplications • Low gate charge (14nC typ) • DC/DC converter • High power and current handling capab ..
FMP-3FU , Damper diode (Diode modulation for Displays)
FMP-3FU , Damper diode (Diode modulation for Displays)
FMP-3FU , Damper diode (Diode modulation for Displays)
FMP-G12S , ULTRA-FAST-RECOVERY RECTIFIER DIODES
FMP-G2FS , Damper Diodes (For Display)
FMP-G2FS , Damper Diodes (For Display)
FDB8896-FDB8896_NL
30V N-Channel PowerTrench MOSFET
FDB8896 November 2004 FDB8896 ® N-Channel PowerTrench MOSFET 30V, 93A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to r = 5.7mΩ, V = 10V, I = 35A DS(ON) GS D improve the overall efficiency of DC/DC converters using r = 6.8mΩ, V = 4.5V, I = 35A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) Low gate charge Applications High power and current handling capability • DC/DC converters D GATE G DRAIN SOURCE (FLANGE) TO-263AB S FDB SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 93 A Continuous (T = 25 C, V = 10V) (Note 1) C GS o I Continuous (T = 25 C, V = 4.5V) (Note 1) 85 A D C GS o o Continuous (T = 25 C, V = 10V, with R = 43 C/W) 19 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 2) 74 mJ AS Power dissipation 80 W P D o o Derate above 25C0.53W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-263 1.88 C/W θJC o R Thermal Resistance Junction to Ambient TO-263 ( Note 3) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB8896 FDB8896 TO-263AB 330mm 24mm 800 units FDB8896 FDB8896_NL (Note 4) TO-263AB 330mm 24mm 800 units ©2004 FDB8896 Rev. B1
