FDB8443 ,N-Channel PowerTrench?MOSFET 40V, 182A, 3m?Applications R = 2.3 mΩ ( Typ.)@ V = 10 V, I = 80 A DS(on) GS D Power Tools Q ..
FDB8444 ,40V N-Channel PowerTrench?MOSFETApplications Automotive Engine Control Typ r = 3.9mΩ at V = 10V, I = 70ADS(on) GS D Powertrain ..
FDB8444TS ,N-Channel PowerTrench MOSFET with Temperature Sensor 40V, 70A, 5mOhmsApplications Typ r = 3.8mΩ at V = 10V, I = 70A Automotive Engine ControlDS(on) ..
FDB8445 ,40V N-Channel PowerTrench?MOSFETApplications Automotive Engine Control Typ r = 6.8mΩ at V = 10V, I = 70ADS(on) GS D Powertrain ..
FDB8447L ,40V 40V N-Channel PowerTrench?MOSFETGeneral Description Max r = 8.5mΩ at V = 10V, I = 14AThis N-Channel MOSFET has been produced using ..
FDB8832 ,30V N-Channel Logic Level PowerTrench?MOSFETApplications Typ r = 1.5mΩ at V = 5V, I = 80A Starter / Alternator SystemsDS(on) GS D Typ Q = 1 ..
FMN-2206S , Silicon Diode
FMN-G12S , Ultra-Fast-Recovery Rectifier Diodes
FMN-G12S , Ultra-Fast-Recovery Rectifier Diodes
FMP-2FUR , Damper diode (Diode modulation for Displays)
FMP-2FUR , Damper diode (Diode modulation for Displays)
FMP-3FU , Damper diode (Diode modulation for Displays)
FDB8443
N-Channel PowerTrench?MOSFET 40V, 182A, 3m?
® FDB8443 N-Channel PowerTrench MOSFET March 2013 FDB8443 tm ® N-Channel PowerTrench MOSFET 40 V, 182 A, 3.0 mΩ Features Applications R = 2.3 mΩ ( Typ.)@ V = 10 V, I = 80 A DS(on) GS D Power Tools Q = 142 nC ( Typ.) G(tot) Motor drives and Uninterruptible Power Supplies Low Miller Charge, Q = 32 nC( Typ.) GD Synchronous Rectification UIS Capability (Single Pulse and Repetitive Pulse) Battery Protection Circuit RoHS Compliant D G D2-PAK S (TO-263) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FDB8443 Unit V Drain to Source Voltage 40 V DSS V Gate to Source Voltage ±20 V GS o - Continuous (T = 25 C, Silicon Limited) 182* C o - Continuous (T = 100 C, Silicon Limited) 129* C I Drain Current D o - Continuous (T = 25 C, Package Limited) 120 A C o o - Continuous (T = 25 C, R = 43 C/W) 25 A θJA I Drain Current - Pulsed See Figure 4 DM E Single Pulse Avalanche Energy (Note 1) 531 mJ AS Power Dissipation 188 W P D o o Derate above 25C1.25W/ C o T , T Operating and Storage Temperature -55 to +175 C J STG *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDB8443 Unit o R Thermal Resistance Junction to Case, Max. 0.8 C/W θJC o R Thermal Resistance Junction to Ambient, Max. (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area, Max. 43 C/W θJA ©2010 1 FDB8443 Rev. C1
