FDB6670AS ,30V N-Channel PowerTrench SyncFETFeatures This MOSFET is designed to replace a single MOSFET • 31 A, 30 V. R = 8.5 mΩ @ V = 10 V DS( ..
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FDB6670AS
30V N-Channel PowerTrench SyncFET
FDP6670AS/FDB6670AS January 2005 FDP6670AS/FDB6670AS ® ™ 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET • 31 A, 30 V. R = 8.5 mΩ @ V = 10 V DS(ON) GS and parallel Schottky diode in synchronous DC:DC R = 10.5 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky body diode R and low gate charge. The FDP6670AS DS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of • Low gate charge (28nC typical) the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the • High performance trench technology for extremely performance of the FDP6670A/FDB6670A in parallel low R and fast switching DS(ON) with a Schottky diode. • High power and current handling capability D D G G G S TO-220 TO-263AB D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous A D 62 – Pulsed (Note 1) 150 P W D Total Power Dissipation @ T = 25°C 62.5 C Derate above 25°C W/°C 0.5 T , T °C J STG Operating and Storage Junction Temperature Range –55 to +150 T Maximum lead temperature for soldering purposes, L °C 275 1/8” from case for 5 seconds Thermal Characteristics R Thermal Resistance, Junction-to-Case 2.1 θJC °C/W R θJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6670AS FDB6670AS 13’’ 24mm 800 units FDB6670AS FDB6670AS_NL (Note 3) 13’’ 24mm 800 units FDP6670AS FDP6670AS Tube n/a 45 FDP6670AS FDP6670AS_NL (Note 4) Tube n/a 45 FDP6670AS/FDB6670AS Rev A(X) ©2005
