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FDB5690
60V N-Channel PowerTrench TM MOSFET
FDP5690/FDB5690 FDP5690/FDB5690 TM 60V N-Channel PowerTrench MOSFET General Description Features • R.32 A, 60 V = 0.027 Ω @ V = 10 V GS This N-Channel MOSFET has been designed specifically R = 0.032 Ω @ V. = 6 V GS to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. temperature. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R.DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. High performance trench technology for extremely low . ° D D G G G TO-220 D FDP Series S TO-263AB S S FDB Series Absolute Maximum Ratings T = 25°C unless otherwise noted C FDP5690 FDB5690 Symbol Parameter Units V Drain-Source Voltage 60 V DSS ± VGSS Gate-Source Voltage 20 V I Maximum Drain Current - Continuous 32 A D - Pulsed 100 P D Total Power Dissipation @ T = 25°C 58 W C Derate above 25°C 0.4 W/°C T , T Operating and Storage Junction Temperature Range -65 to +175 °C J STG Thermal Characteristics ° R JC Thermal Resistance, Junction-to-Case 2.6 C/W θ R Thermal Resistance, Junction-to-Ambient 62.5 °C/W JA θ Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDB5690 FDB5690 13’’ 24mm 800 FDP5690 FDP5690 Tube N/A 45 2000 Fairchild Semiconductor InternationalvC . FDP5690/FDB5690 Re C maximum junction temperature rating. 175 DS(ON) R need for an external Zener diode transient suppressor Rugged internal source-drain diode can eliminate the Critical DC electrical parameters specified at evevated DS(ON) DS(ON) July 2000
