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FDB3502
75V N-Channel Power Trench?MOSFET
® FDB3502 N-Channel Power Trench MOSFET May 2008 FDB3502 tm ® N-Channel Power Trench MOSFET 75V, 14A, 47mΩ Features General Description Max r = 47mΩ at V = 10V, I = 6A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor‘s advanced Power Trench process that has 100% UIL Tested been especially tailored to minimize the on-state resistance and RoHS Compliant yet maintain superior switching performance. Application Synchronous rectifier D D G G S TO-263AB FDB Series S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 75 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 14 C -Continuous (Silicon limited) T = 25°C 22 C I A D -Continuous T = 25°C (Note 1a) 6 A -Pulsed 40 E Single Pulse Avalanche Energy (Note 3) 54 mJ AS Power Dissipation T = 25°C 41 C P W D Power Dissipation T = 25°C (Note 1a) 3.1 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB3502 FDB3502 TO-263AB 330 mm 24 mm 800 units 1 ©2008 FDB3502 Rev.C2
