FDB2552 ,N-Channel PowerTrench ?MOSFET 150V, 37A, 36mOhmApplications•r = 32mΩ (Typ.), V = 10V, I = 16A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDB2552 ,N-Channel PowerTrench ?MOSFET 150V, 37A, 36mOhmFDB2552 / FDP2552June 2002FDB2552 / FDP2552®N-Channel PowerTrench MOSFET150V, 37A, 36mΩ
FDB2570 ,150V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 22 A, 150 V. R = 80 mΩ @ V = 10 VDS(ON) GSspecific ..
FDB2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmApplicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDB2572 ,N-Channel UltraFET ?Trench MOSFET 150V, 29A, 54mOhmFDB2572 / FDP2572July 2002FDB2572 / FDP2572®N-Channel UltraFET Trench MOSFET150V, 29A, 54mΩ
FDB2614 ,N-Channel PowerTrench?MOSFET 200V, 62A, 27m?Applications • High Power and Current Handling Capability• Synchronous Rectificat ..
FMMT617TC , 15V NPN LOW SATURATION TRANSISTOR IN SOT23
FMMT618 , NPN SILICON POWER (SWITCHING) TRANSISTORS
FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
FMMT619TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FMMT619-TA , 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
FDB2552
N-Channel PowerTrench ?MOSFET 150V, 37A, 36mOhm
FDB2552 / FDP2552 June 2002 FDB2552 / FDP2552 ® N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications •r = 32mΩ (Typ.), V = 10V, I = 16A DC/DC Converters and Off-line UPS DS(ON) GS D Q (tot) = 39nC (Typ.), V = 10VDistributed Power Architectures and VRMs g GS Low Miller ChargePrimary Switch for 24V and 48V Systems Low Qrr Body DiodeHigh Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse)Direct Injection / Diesel Injection Systems Qualified to AEC Q10142V Automotive Load Control Electronic Valve Train Systems Formerly developmental type 82869 D DRAIN GATE SOURCE (FLANGE) DRAIN G GATE DRAIN SOURCE (FLANGE) S TO-220AB TO-263AB FDP SERIES FDB SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 37 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 26 A D C GS o o Continuous (T = 25 C, V = 10V) with R = 43 C/W 5 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 390 mJ AS Power dissipation 150 W P D o o Derate above 25C1.0W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-263 1.0 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB2552 / FDP2552 Rev. A
