FDB047N10 ,N-Channel PowerTrench?MOSFET 100V, 164A, 4.7m?General Description•R = 3.9 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing ..
FDB050AN06A0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263ABApplications•r = 4.3mΩ (Typ.), V = 10V, I = 80A Motor / Body Load ControlDS(ON) GS DQ (tot) = 61 ..
FDB050AN06A0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263ABApplications•r = 4.3mΩ (Typ.), V = 10V, I = 80A Motor / Body Load ControlDS(ON) GS DQ (tot) = 61 ..
FDB070AN06A0 ,N-Channel PowerTrench MOSFET 60V, 80A, 7mOhmFDB070AN06A0 / FDP070AN06A0March 2003FDB070AN06A0 / FDP070AN06A0®N-Channel PowerTrench MOSFET60V, ..
FDB070AN06A0 ,N-Channel PowerTrench MOSFET 60V, 80A, 7mOhmApplications•r = 6.1mΩ (Typ.), V = 10V, I = 80A Motor / Body Load ControlDS(ON) GS DQ (tot) = 51 ..
FDB10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 75A, 10.5mOhmApplications•r = 9.5mΩ (Typ.), V = 10V, I = 75A Motor / Body Load ControlDS(ON) GS DQ (tot) = 28 ..
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FDB047N10
N-Channel PowerTrench?MOSFET 100V, 164A, 4.7m?
® FDB047N10 N-Channel PowerTrench MOSFET March 2013 FDB047N10 ® N-Channel PowerTrench MOSFET 100 V, 164 A, 4.7 mΩ Description General Description •R = 3.9 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing Fairchild Semicon- DS(on) GS D ® ® ductor ’s advanced PowerTrench process that has been tai- • Fast Switching Speed lored to minimize the on-state resistance while maintaining superior switching performance. • Low Gate Charge • High Performance Trench Technology for Extremely Low Applications R DS(on) • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handing Capability • Battery Protection Circuit • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D D G 2 D -PAK GS S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDB047N10 Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GSS o 164* A Drain Current - Continuous (T = 25 C, Silicon Limited) C o I - Continuous (T = 100 C, Silicon Limited) 116* A D C o - Continuous (T = 25 C, Package Limited) C 120 A I Drain Current - Pulsed (Note 1) 656* A DM E Single Pulsed Avalanche Energy (Note 2) 1153 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 375 W C P Power Dissipation D o o - Derate above 25C2.5W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDB047N10 Unit R Thermal Resistance, Junction to Case, Max. 0.4 θJC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R θJA 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. 40 ©2008 1 FDB047N10 Rev. C1
