FDB045AN08A0 ,N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.5mOhmFDB045AN08A0April 2002FDB045AN08A0®N-Channel UltraFET Trench MOSFET75V, 80A, 4.5mΩ
FDB047N10 ,N-Channel PowerTrench?MOSFET 100V, 164A, 4.7m?General Description•R = 3.9 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing ..
FDB050AN06A0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263ABApplications•r = 4.3mΩ (Typ.), V = 10V, I = 80A Motor / Body Load ControlDS(ON) GS DQ (tot) = 61 ..
FDB050AN06A0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263ABApplications•r = 4.3mΩ (Typ.), V = 10V, I = 80A Motor / Body Load ControlDS(ON) GS DQ (tot) = 61 ..
FDB070AN06A0 ,N-Channel PowerTrench MOSFET 60V, 80A, 7mOhmFDB070AN06A0 / FDP070AN06A0March 2003FDB070AN06A0 / FDP070AN06A0®N-Channel PowerTrench MOSFET60V, ..
FDB070AN06A0 ,N-Channel PowerTrench MOSFET 60V, 80A, 7mOhmApplications•r = 6.1mΩ (Typ.), V = 10V, I = 80A Motor / Body Load ControlDS(ON) GS DQ (tot) = 51 ..
FMMT589 , PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
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FMMT619 , Collector current:IC=2A, power dissipation :PC=625mw
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FDB045AN08A0
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.5mOhm
FDB045AN08A0 April 2002 FDB045AN08A0 ® N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mΩ Features Applications •r = 3.9mΩ (Typ.), V = 10V, I = 80A 42V Automotive Load Control DS(ON) GS D Q (tot) = 92nC (Typ.), V = 10VStarter / Alternator Systems g GS Low Miller ChargeElectronic Power Steering Systems Low Qrr Body DiodeElectronic Valve Train Systems UIS Capability (Single Pulse and Repetitive Pulse)DC-DC converters and Off-line UPS Qualified to AEC Q101Distributed Power Architectures and VRMs Primary Switch for 24V and 48V systems Formerly developmental type 82684 D GATE G DRAIN SOURCE (FLANGE) TO-263AB S FDB SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 75 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 80 A Continuous (T < 145 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, with R = 43 C/W) 19 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 600 mJ AS Power dissipation 310 W P D o o Derate above 25C2.0W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-263 0.48 C/W θJC o R Thermal Resistance Junction to Ambient TO-263 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB045AN08A0 Rev. A
