FDA50N50 ,500V N-Channel UniFETFDH50N50 / FDA50N50 500V N-Channel MOSFETTMUniFETFDH50N50 / FDA50N50 500V N-Channel MOSFET
FDA50N50 ,500V N-Channel UniFETFeatures Description• 48A, 500V, R = 0.105Ω @V = 10 V These N-Channel enhancement mode power field ..
FDA59N25 ,N-Channel UniFETTM MOSFET 250V, 59A, 49m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic PDP TVlamp ballasts. Un ..
FDA59N25 ,N-Channel UniFETTM MOSFET 250V, 59A, 49m?Features DescriptionTM ®• R = 49 mΩ (Max.) @ V = 10 V, I = 29.5 A UniFET MOSFET is Fairchild Semic ..
FDA59N25 ,N-Channel UniFETTM MOSFET 250V, 59A, 49m?applications such as power factor correction
FDA59N25 ,N-Channel UniFETTM MOSFET 250V, 59A, 49m?TMFDA59N25 N-Channel UniFET MOSFETApril 2013FDA59N25 TMN-Channel UniFET MOSFET 250 V, 59 A, 49 mΩ
FMMT5400 , SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS
FMMT549 ,Discrete
FMMT549 ,Discrete
FMMT558TA , 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
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FDA50N50-FDH50N50
500V N-Channel UniFET
FDH50N50 / FDA50N50 500V N-Channel MOSFET TM UniFET FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description • 48A, 500V, R = 0.105Ω @V = 10 V These N-Channel enhancement mode power field effect transis- DS(on) GS tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 105 nC) DMOS technology. • Low C ( typical 45 pF) rss This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- • 100% avalanche tested mance, and withstand high energy pulse in the avalanche and • Improved dv/dt capability commutation mode. These devices are well suited for high effi- cient switched mode power supplies and active power factor correction. D ! ! "" !! "" "" ! ! G "" TO-247 TO-3P ! ! G FDH Series D FDA Series S GS D S Absolute Maximum Ratings Symbol Parameter FDH50N50/FDA50N50 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25°C) 48 A D C - Continuous (T = 100°C) 30.8 A C (Note 1) I Drain Current - Pulsed 192 A DM V Gate-Source voltage ±20 V GSS (Note 2) E Single Pulsed Avalanche Energy 1868 mJ AS I Avalanche Current (Note 1) 48 A AR E Repetitive Avalanche Energy (Note 1) 62.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 625 W D C - Derate above 25°C 5 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Min. Max. Unit R Thermal Resistance, Junction-to-Case -- 0.2 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2004 1 FDH50N50 / FDA50N50 Rev. A
