FDA24N50 ,N-Channel UniFETTM MOSFET 500V, 24A, 190m?Applications•PDP TV• Uninterruptible Power Supply• AC-DC Power SupplyDGGTO-3PN D SSoMOSFET ..
FDA24N50 ,N-Channel UniFETTM MOSFET 500V, 24A, 190m?Features DescriptionTM ®•R = 160 m (Typ.) @ V = 10 V, I = 12 A UniFET MOSFET is Fairchild Semicon ..
FDA28N50 ,N-Channel UniFETTM MOSFET 500V, 28A, 155m?TMFDA28N50 N-Channel UniFET MOSFETMarch 2013FDA28N50 TMN-C ..
FDA28N50 ,N-Channel UniFETTM MOSFET 500V, 28A, 155m?Applications•PDP TV• Uninterruptible Power Supply• AC-DC Power SupplyDGG DTO-3PN SSoMOSFET ..
FDA28N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 28A, 175m?ApplicationsThis device family is suitable for switching power converter appli-•PDP TVcations such ..
FDA28N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 28A, 175m?Features DescriptionTM ®•R = 140 m (Typ.) @ V = 10 V, I = 14 A UniFET MOSFET is Fairchild Semicon ..
FMMT491TC , 60V NPN MEDIUM POWER TRANSISTOR IN SOT23
FMMT493ATA , 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR
FMMT5400 , SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS
FMMT549 ,Discrete
FMMT549 ,Discrete
FMMT558TA , 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
FDA24N50
N-Channel UniFETTM MOSFET 500V, 24A, 190m?
TM FDA24N50 N-Channel UniFET MOSFET March 2013 FDA24N50 TM N-Channel UniFET MOSFET 500 V, 24 A, 190 m Features Description TM ® •R = 160 m (Typ.) @ V = 10 V, I = 12 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge ( Typ. 65 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low C (Typ. 35 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic • RoHS Compliant lamp ballasts. Applications •PDP TV • Uninterruptible Power Supply • AC-DC Power Supply D G G TO-3PN D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDA24N50 Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 24 C I Drain Current A D o - Continuous (T = 100 C) 14 C I Drain Current - Pulsed (Note 1) 96 A DM E Single Pulsed Avalanche Energy (Note 2) 1872 mJ AS I Avalanche Current (Note 1) 24 A AR E Repetitive Avalanche Energy (Note 1) 27 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 270 W C P Power Dissipation D o o - Derate above 25C2.2W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA24N50 Unit R Thermal Resistance, Junction to Case, Max. 0.46 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 40 JA 1 ©2008 FDA24N50 Rev. C0
