FCPF11N60F ,600V N-Channel MOSFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCPF11N60NT ,N-Channel SupreMOS?MOSFET 600V, 10.8A, 299m?Features Description® ®•R = 255 mΩ (Typ.) @ V = 10 V, I = 5.4 A The SupreMOS MOSFET is Fairchild Se ..
FCPF11N60NT ,N-Channel SupreMOS?MOSFET 600V, 10.8A, 299m?applications.Application• LCD/LED/PDP TV• Lighting• Solar Inverter• AC-DC Power SupplyDGTO-220TO-22 ..
FCPF11N60T , General Description
FCPF11N60T , General Description
FCPF13N60NT ,N-Channel SupreMOS?MOSFET 600V, 13A, 258m?applications.Application• LCD/LED/PDP TV• Lighting• Solar Inverter• AC-DC Power SupplyDGTO-220TO-22 ..
FMA7A , Emitter common (dual digital transistors)
FMA7A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMB-2204 , Schottky Barrier Diodes
FMB-2204 , Schottky Barrier Diodes
FCPF11N60F
600V N-Channel MOSFET
FCP11N60F/FCPF11N60F 600V N-Channel MOSFET TM SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features Description TM • 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of high J voltage MOSFET family that is utilizing an advanced charge •Typ. R = 0.32Ω DS(on) balance mechanism for outstanding low on-resistance and • Fast Recovery Type ( t = 120ns) lower gate charge performance. rr • Ultra Low Gate Charge (typ. Q = 40nC) This advanced technology has been tailored to minimize g conduction loss, provide superior switching performance, and • Low Effective Output Capacitance (typ. C eff.=95pF) oss withstand extreme dv/dt rate and higher avalanche energy. • 100% avalanche tested Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D ! ! "" !! "" "" G! ! "" TO-220 TO-220F G D ! ! S G D S S Absolute Maximum Ratings Symbol Parameter FCP11N60F FCPF11N60F Units I Drain Current - Continuous (T = 25°C) 11 11 * A D C - Continuous (T = 100°C) 7 7 * A C (Note 1) I Drain Current - Pulsed 33 33 * A DM V Gate-Source Voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 340 mJ AS (Note 1) I Avalanche Current 11 A AR (Note 1) E Repetitive Avalanche Energy 12.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 125 36 * W D C - Derate above 25°C 1.0 0.29 * W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG T Maximum lead temperature for soldering purposes, 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol Parameter FCP11N60F FCPF11N60F Units R Thermal Resistance, Junction-to-Case 1.0 3.5 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2005 1 FCP11N60F/FCPF11N60F Rev. A
