FCP9N60N ,N-Channel SupreMOS?MOSFET 600V, 9A, 385m?applications.Application• LCD/LED/PDP TV• Lighting• Solar Inverter• AC-DC Power SupplyDGTO-220TO-22 ..
FCPF11N60 ,600V N-Channel SuperFETFeaturesTMSuperFET is a new generation of high voltage MOSFETs • 650V @T = 150°Cjfrom Fairchild wit ..
FCPF11N60.. ,600V N-Channel SuperFETFCP11N60/FCPF11N60TMSuperFETFCP11N60/FCPF11N60
FCPF11N60F ,600V N-Channel MOSFETFeatures DescriptionTM• 650V @T = 150°C SuperFET is, Farichild’s proprietary, new generation of hig ..
FCPF11N60NT ,N-Channel SupreMOS?MOSFET 600V, 10.8A, 299m?Features Description® ®•R = 255 mΩ (Typ.) @ V = 10 V, I = 5.4 A The SupreMOS MOSFET is Fairchild Se ..
FCPF11N60NT ,N-Channel SupreMOS?MOSFET 600V, 10.8A, 299m?applications.Application• LCD/LED/PDP TV• Lighting• Solar Inverter• AC-DC Power SupplyDGTO-220TO-22 ..
FMA2A , Emitter common (dual digital transistors)
FMA7A , Emitter common (dual digital transistors)
FMA7A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMA8A , Emitter common (dual digital transistors)
FMB-2204 , Schottky Barrier Diodes
FCP9N60N
N-Channel SupreMOS?MOSFET 600V, 9A, 385m?
FCP9N60N / FCPF9N60NT N-Channel MOSFET March 2013 FCP9N60N / FCPF9N60NT ® N-Channel SupreMOS MOSFET 600 V, 9 A, 385 mΩ Features Description ® ® •R = 330 mΩ (Typ.)@ V = 10 V, I = 4.5 A The SupreMOS MOSFET is Fairchild Semiconductor ’s next- DS(on) GS D generation of high voltage super-junction (SJ) technology • Ultra low gate charge (Typ. Q = 22 nC) g employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and pre- • Low effective output capacitance (Typ. C .eff = 106 pF) oss cise process control provide lowest Rsp on-resistance, superior • 100% avalanche tested switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applica- • RoHS compliant tions such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Application • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply D G TO-220 TO-220F G D S G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FCP9N60N FCPF9N60NT Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±30 V GSS o -Continuous (T = 25 C) 9.0 9.0* C I Drain Current A D o -Continuous (T = 100 C) 5.7 5.7* C I Drain Current - Pulsed (Note 1) 27 27* A DM E Single Pulsed Avalanche Energy (Note 2) 135 mJ AS I Avalanche Current 3 A AR E Repetitive Avalanche Energy 0.83 mJ AR MOSFET dv/dt Ruggedness 100 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 83.3 29.8 W C P Power Dissipation D o o - Derate above 25 C 0.67 0.24 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP9N60N FCPF9N60NT Unit R Thermal Resistance, Junction to Case 1.5 4.2 θJC o R Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 C/W θCS R Thermal Resistance, Junction to Ambient 62.5 62.5 θJA ©2009 1 FCP9N60N / FCPF9N60NT Rev. C0
